Negative Tone hydrogen silesquioxane EBL Resist
DisChem H-SiQ is a negative tone hydrogen silesquioxane resist derived from dry silica resin (H-SiOx) in semiconductor grade MIBK carrier solvent for use in electron beam lithography (EBL). H-SiQ is characterized by excellent pitch resolution, sensitivity and etch resistance for direct write thin film EBL applications.
Immediate availability: lead time less than one week with 100% shelf life!
H-SiQ Product Bulletin
H-SiQ Application Sheet
Hard Mask in a Bottle
nEBL3 Negative-Tone Electron Beam Resist
nEBL3 is an advanced negative tone organo-metalic resist with extremely high etch resistance and low line edge roughness that allows for EBL direct write of a chromium hard mask in a single step. nEBL3 is ideal for next generation EUV photomasks. Manufactured as a dry resin resist by SCI-TRON (Manchester, UK), nEBL3 is blended in carrier solvent for exclusive distribution in North America by DisChem, Inc.