Resist Materials

Negative Tone hydrogen silesquioxane EBL Resist

DisChem H-SiQ is a negative tone hydrogen silesquioxane resist derived from dry silica resin (H-SiOx) in semiconductor grade MIBK carrier solvent for use in electron beam lithography (EBL). H-SiQ is characterized by excellent pitch resolution, sensitivity and etch resistance for direct write thin film EBL applications.

Immediate availability: lead time less than one week with 100% shelf life!

H-SiQ Product Bulletin

H-SiQ Application Sheet

Negative Tone EBL Resist - DisChem Inc

Revolutionize Your Lithography with HSQ E-Beam Resist

Have you ever faced challenges with your lithography processes? Struggling with pattern precision or etch resistance? At DisChem, we understand the complexities and demands of advanced lithography. Our mission is to provide innovative solutions that address these challenges head-on, ensuring you get the best results every time.

Discover the Power of H-SiQ

One of our standout products is the H-SiQ, a next-generation HSQ (hydrogen silsesquioxane) negative resist designed specifically for electron beam lithography (EBL) applications. But why should you choose H-SiQ? Let’s dive into what makes this product a game-changer.

What is H-SiQ?

H-SiQ is a negative tone resist derived from hydrogen silsesquioxane, known for its superior pitch resolution, sensitivity, and etch resistance. This makes it perfect for direct write thin film EBL applications. Prepared in MIBK, H-SiQ is available in concentrations ranging from 1 – 20% wt/vol, suitable for film thicknesses between 25 to 850 nm. It’s ready to use and comes with a 100% shelf life guarantee, ensuring immediate availability whenever you need it.

Solving Your Lithography Problems

Are you dealing with low-resolution patterns? Is the sensitivity of your resist causing issues in your production line? H-SiQ addresses these common problems by offering excellent pitch resolution and sensitivity, ensuring high-fidelity pattern transfer. Its remarkable etch resistance further enhances the durability and accuracy of your lithographic processes.

Why Choose HSQ e-beam Resist? 

When it comes to electron beam lithography, precision and reliability are paramount. Our HSQ e-beam resist is designed to meet these demands. H-SiQ’s outstanding performance characteristics make it an ideal choice for applications that require direct write thin films. Whether you’re working on semiconductor devices, advanced photomasks, or other high-tech components, HSQ e-beam resist ensures your patterns are sharp, accurate, and durable.

The Advantages of HSQ Negative Resist

HSQ negative resist is known for its high-resolution capabilities and excellent etch resistance. But what sets it apart?

  • Superior Pitch Resolution: Achieve intricate and precise patterns with ease.
  • High Sensitivity: Reduce exposure times and enhance throughput.
  • Exceptional Etch Resistance: Maintain pattern integrity through rigorous processing steps.

At DisChem, we provide HSQ negative resist that meets the highest standards, ensuring your lithographic processes run smoothly and efficiently.

Why Trust DisChem?

At DisChem, we pride ourselves on our commitment to quality and innovation. With years of experience in the industry, we understand the challenges you face and are dedicated to providing solutions that not only meet but exceed your expectations. Our products are rigorously tested to ensure they deliver the performance you need, every time.

Ready to Enhance Your Lithography Processes?

If you’re ready to take your lithography to the next level, it’s time to explore the benefits of DisChem’s H-SiQ and other advanced products. With immediate availability and a focus on solving your specific challenges, DisChem is your go-to partner for high-performance lithography solutions.

Have questions or need more information? We’re here to help. Contact us today to learn more about our products and how they can enhance your lithography processes.

Call us at (814) 772-6603 or visit our website for more details.